NXP Semiconductors BFG325XR
NPN 14 GHz wideband transistor
| Part No. | BFG325XR |
|---|---|
| Datasheet | BFG325XR Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN 14 GHz wideband transistor |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● High power gain● Low noise figure
● High transition frequency
● Gold metallization ensures excellent reliability 1.3
APPLICATIONS
● Intended for Radio Frequency (RF) front end applications in the GHz range, such as:● analog and digital cellular telephones
● cordless telephones (Cordless Telephone (CT), Personal Communication Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.)
● radar detectors
● pagers
● Satellite Antenna TeleVision (SATV) tuners
● repeater amplifiers in fiber-optic systems 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VCBO VCEO IC Ptot hFE CCBS collector-base voltage open emitter collector-emitter voltage open base collector current (DC) total power dissipation DC current gain collector-base capacitance Tsp 90 C IC = 15 mA; VCE = 3 V; Tj = 25 C VCB = 5 V; f = 1 MHz; emitter grounded fT transition frequency IC = 15 mA; VCE = 3 V; f = 1 GHz; Tamb = 25 C Min Typ Max Unit - - 15 V - - 6 V - - 35 mA [1] - - 210 mW 60 100 200 - 0.26 0.4 pF - 14 - GHz NXP Semiconductors BFG325/XR NPN 14 GHz wideband transistor Table 1.
