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BFG505 - NPN 9 GHz wideband transistors

General Description

NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package.

Key Features

  • High power gain.
  • Low noise figure.
  • High transition frequency.
  • Gold metallization ensures excellent reliability.

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Other Datasheets by NXP Semiconductors

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NXP Semiconductors NPN 9 GHz wideband transistors Product specification BFG505; BFG505/X FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV). PINNING PIN 1 2 3 4 DESCRIPTION BFG505 BFG505/X collector base emitter emitter collector emitter base emitter DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. MARKING TYPE NUMBER BFG505 BFG505/X CODE %ME %MK handbook, 2 c4olumns 3 1 Top view 2 MSB014 Fig.1 Simplified outline SOT143B.