NXP Semiconductors BFG505
NPN 9 GHz wideband transistors
| Part No. | BFG505 |
|---|---|
| Datasheet | BFG505 Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN 9 GHz wideband transistors |
| Buy | Stock & Price |
FEATURES
● High power gain● Low noise figure
● High transition frequency
● Gold metallization ensures excellent reliability.
APPLICATIONS
RF front end applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV). PINNING PIN 1 2 3 4DESCRIPTION
BFG505 BFG505/X collector base emitter emitter collector emitter base emitterDESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. MARKING TYPE NUMBER BFG505 BFG505/X CODE %ME %MK handbook, 2 c4olumns 3 1 Top view 2 MSB014 Fig.1 Simplified outline SOT143B. QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE Cre fT GUM S212 F PARAMETER CONDITIONS collector-base voltage open emitter collector-emitter voltage RBE = 0 collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain insertion power gain noise figure Ts...
