BFG505 Datasheet | NXP Semiconductors

FEATURES - High power gain - Low noise figure - High transition frequency - Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV). PINNING 1 2 3 4 DESCRIPTION BFG505/X collector base emitter emitter collector emitter base emitter DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. MARKING TYPE NUMBER BFG505 BFG505/X CODE %ME %MK handbook, 2 c4olumns 1 Top view MSB014 Fig.1 Simplified outline SOT143B. QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot h FE Cre f T GUM S212 PARAMETER CONDITIONS collector-base voltage open emitter collector-emitter voltage RBE = 0 collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain insertion...