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BFG520 Datasheet NPN 9ghz Wideband Transistor

Manufacturer: NXP Semiconductors

Overview: BFG520; BFG520/X; BFG520/XR NPN 9 GHz wideband transistor Rev. 04 — 23 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://.philips.semiconductors. use http://.nxp. http://.semiconductors.philips. use http://.nxp. (Internet) sales.addresses@.semiconductors.philips. use salesaddresses@nxp. (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. - If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.).

General Description

NPN silicon planar epitaxial transistors, intended for applications in the RF frontend in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV) and repeater amplifiers in fibre-optic systems.

The transistors are encapsulated in 4-pin, dual-emitter plastic SOT143 and SOT143R envelopes.

PINNING PIN DESCRIPTION BFG520 (Fig.1) Code: %MF 1 collector 2 base 3 emitter 4 emitter BFG520/X (Fig.1) Code: %ML 1 collector 2 emitter 3 base 4 emitter BFG520/XR (Fig.2) Code: %MP 1 collector 2 emitter 3 base 4 emitter fpage 4 3 1 Top view 2 MSB014 Fig.1 SOT143B

Key Features

  • High power gain.
  • Low noise figure.
  • High transition frequency.
  • Gold metallization ensures excellent reliability.

BFG520 Distributor