BFG520
FEATURES
- High power gain
- Low noise figure
- High transition frequency
- Gold metallization ensures excellent reliability.
DESCRIPTION
NPN silicon planar epitaxial transistors, intended for applications in the RF frontend in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV) and repeater amplifiers in fibre-optic systems.
The transistors are encapsulated in 4-pin, dual-emitter plastic SOT143 and SOT143R envelopes.
PINNING
DESCRIPTION
BFG520 (Fig.1) Code: %MF
1 collector
2 base
3 emitter
4 emitter
BFG520/X (Fig.1) Code: %ML
1 collector
2 emitter
3 base
4 emitter
BFG520/XR (Fig.2) Code: %MP
1 collector
2 emitter
3 base
4 emitter fpage
1 Top view
MSB014
Fig.1 SOT143B. handbook, 2 co3lumns
Top view
MSB035
Fig.2 SOT143R.
QUICK REFERENCE DATA
SYMBOL VCBO VCEO Ic Ptot h FE Cre f...
