NXP Semiconductors BFG520W
NPN 9 GHz wideband transistors
| Part No. | BFG520W |
|---|---|
| Datasheet | BFG520W Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN 9 GHz wideband transistors |
| Buy | Stock & Price |
FEATURES
● High power gain● Low noise figure
● High transition frequency
● Gold metallization ensures excellent reliability.
APPLICATIONS
RF front end wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV) and repeater amplifiers in fibre-optic systems. PINNINGDESCRIPTION
PIN BFG250W 1 2 3 4 collector base emitter emitter BFG250W/X collector emitter base emitter handbook, halfpage 4 3DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. 1 2 MBK523 MARKING TYPE NUMBER BFG520W BFG520W/X QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE Cre fT GUM |S21|2 F PARAMETER collector-base voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain insertion power gain noise figure Ts ≤ 85 °C IC = 20 mA; VCE = 6 V IC = 0; VCB = 6 V; f = 1 MHz open emitter collector-emitter voltage RBE = 0 CONDITIONS CODE N3 N4 Top view Fig.1 Simplified outline SOT343N.
