BFG520W
FEATURES
- High power gain
- Low noise figure
- High transition frequency
- Gold metallization ensures excellent reliability. APPLICATIONS RF front end wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV) and repeater amplifiers in fibre-optic systems.
PINNING DESCRIPTION
PIN BFG250W 1 2 3 4 collector base emitter emitter BFG250W/X collector emitter base emitter handbook, halfpage
DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package.
1 2
MBK523
MARKING TYPE NUMBER BFG520W BFG520W/X QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot h FE Cre f T GUM |S21|2 F PARAMETER collector-base voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain insertion power gain noise figure Ts ≤ 85 °C IC = 20 m A; VCE = 6 V IC = 0;...
