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BFG520W Datasheet NPN 9 Ghz Wideband Transistors

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D123 BFG520W; BFG520W/X NPN 9 GHz wideband transistors Product specification Supersedes data of August 1995 1998 Oct 02 Philips Semiconductors Product specification NPN.

General Description

PIN BFG250W 1 2 3 4 collector base emitter emitter BFG250W/X collector emitter base emitter handbook, halfpage 4 3 DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package.

1 2 MBK523 MARKING TYPE NUMBER BFG520W BFG520W/X QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE Cre fT GUM |S21|2 F PARAMETER collector-base voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain insertion power gain noise figure Ts ≤ 85 °C IC = 20 mA;

VCE = 6 V IC = 0;

Key Features

  • High power gain.
  • Low noise figure.
  • High transition frequency.
  • Gold metallization ensures excellent reliability.

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