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BFG67 - NPN 8 GHz wideband transistors

General Description

NPN silicon transistor in a 4-pin, dual-emitter SOT143B plastic package.

Available with in-line emitter pinning (BFG67) and cross emitter pinning (BFG67/X).

Version with reverse pinning (BFG67/XR) also available on request.

Key Features

  • High power gain.
  • Low noise figure.
  • High transition frequency.
  • Gold metallization ensures excellent reliability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BFG67; BFG67/X; BFG67/XR NPN 8 GHz wideband transistors Product specification Supersedes data of September 1995 1998 Oct 02 Philips Semiconductors Product specification NPN 8 GHz wideband transistors FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in the GHz range, such as satellite TV tuners and portable RF communications equipment. DESCRIPTION NPN silicon transistor in a 4-pin, dual-emitter SOT143B plastic package. Available with in-line emitter pinning (BFG67) and cross emitter pinning (BFG67/X). Version with reverse pinning (BFG67/XR) also available on request. MARKING TYPE NUMBER BFG67 (Fig.1) BFG67/X (Fig.1) BFG67/XR (Fig.