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BFG67W - NPN 8 GHz wideband transistor

General Description

NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343 and SOT343R packages.

Key Features

  • High power gain.
  • Low noise figure.
  • Gold metallization ensures excellent reliability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 August 1995 Philips Semiconductors Philips Semiconductors Product specification NPN 8 GHz wideband transistor FEATURES • High power gain • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS They are intended for wideband applications in the GHz range such as analog satellite television systems and portable RF communication equipment. DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343 and SOT343R packages.