Download BFM520 Datasheet PDF
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BFM520 Description

5 4 c1 b2 e1 e2 MAM210 c2 DESCRIPTION Dual transistor with two silicon NPN RF dies in a surface mount 6-pin SOT363 (S-mini) package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular phones, cordless phones, radar detectors, pagers and satellite TV-tuners. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN.

BFM520 Key Features

  • Small size
  • Temperature and hFE matched
  • Low noise and high gain
  • High gain at low current and low capacitance at low voltage
  • Gold metallization ensures excellent reliability