NXP Semiconductors BFM520
The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular phones, cordless phones, radar detectors, pagers and satellite TV-tuners.| Part No. | BFM520 |
|---|---|
| Datasheet | BFM520 Download |
| Manufacturer |  NXP Semiconductors |
| Description | Dual NPN wideband transistor |
| Buy | Stock & Price |
FEATURES
● Small size● Temperature and hFE matched
● Low noise and high gain
● High gain at low current and low capacitance at low voltage
● Gold metallization ensures excellent reliability.
APPLICATIONS
● Oscillator and buffer amplifiers● Balanced amplifiers
● LNA/mixers. b1 6 handbook, halfpage BFM520 PINNING - SOT363A PIN 1 2 3 4 5 6 SYMBOL b1 e1 c2 b2 e2 c1 base 1 emitter 1 collector 2 base 2 emitter 2 collector 1
DESCRIPTION
5 4 c1 b2 e1 e2 MAM210 c2DESCRIPTION
Dual transistor with two silicon NPN RF dies in a surface mount 6-pin SOT363 (S-mini) package. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. − 13 − − − − 1 2 3 Top view Marking code: N2. Fig.1 Simplified outline and symbol. TYP. MAX. − − − − 1.6 230 115 UNIT Any single transistor Cre fT s 21 GUM F Rth j-s 2 feedback capacitance transition frequency insertion power gain maximum unilateral power gain noise figure thermal resistance from junction to soldering point Ie = 0; VCB = 3 V; f = 1 MHz IC = 20 mA; VCE = 3 V; f = 900 MHz; Tamb = 25 °C IC = 20 mA; VCE = 3 V; f = 900 MHz; Tamb = 25 °C IC = 5 mA; VCE = 3 V; f = 900 MHz; ΓS = Γopt single loaded double loaded 0.
