NXP Semiconductors BFQ18A
NPN 4 GHz wideband transistor
| Part No. | BFQ18A |
|---|---|
| Datasheet | BFQ18A Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN 4 GHz wideband transistor |
| Buy | Stock & Price |
DESCRIPTION
NPN transistor in a plastic SOT89 envelope intended for application in thick and thin-film circuits. It is primarily intended for MATV purposes. PINNING PINDESCRIPTION
Code: FF 1 emitter 2 collector 3 base Product specification BFQ18A 321 Fig.1 SOT89. QUICK REFERENCE DATA SYMBOL PARAMETER VCBO VCEO IC Ptot fT collector-base voltage collector-emitter voltage DC collector current total power dissipation transition frequency Cre feedback capacitance dim intermodulation distortion CONDITIONS TYP. MAX. UNIT open emitter − 25 V open base − 18 V − 150 mA up to Ts = 155 °C (note 1) IC = 100 mA; VCE = 10 V; f = 500 MHz; Tj = 25 °C IC = 0; VCE = 10 V; f = 10.7 MHz IC = 80 mA; VCE = 10 V; RL = 75 Ω; Vo = 700 mV; measured at f(p+q-r) = 793.25 MHz − 4 1.2 − 1 − − −60 W GHz pF dB LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VCBO VCEO VEBO IC Ptot Tstg Tj collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature CONDITIONS open emitter open base open collector up to Ts = 155 °C (note 1) Note 1.
