DESCRIPTION
NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film circuits. It is primarily intended for use in UHF and microwave amplifiers such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers etc. Due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. PINNING PIN DESCRIPTION
Code: FB 1 emitter 2 collector 3 base 321 Fig.1 SOT89. QUICK REFERENCE DATA SYMBOL PARAMETER VCEO IC Ptot fT collector-emitter voltage DC collector current total power dissipation transition frequency Cre feedback capacitance F noise figure CONDITIONS TYP. open base − up to Ts = 145 °C (note 1) Ic = 50 mA; VCE = 10 V; f = 500 MHz; Tj = 25 °C Ic = 10 mA; VCE = 10 V; f = 1 MHz; Tamb = 25 °C Ic = 50 mA; VCE = 10 V; Zs = opt.; f = 500 MHz; Tamb = 25 °C − − 5.5 1.3 3.3 MAX. 15 100 1 − − − UNIT V mA W GHz pF dB LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL...
NXP Semiconductors
