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BFQ621 - NPN 7 GHz wideband transistor

General Description

DESCRIPTION Silicon NPN transistor in a 4-lead dual-emitter SOT172A2 package with a ceramic cap.

All leads are isolated from the mounting base.

Key Features

  • High power gain.
  • High output voltage.
  • High maximum junction temperature.
  • Gold metallization ensures excellent reliability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BFQ621 NPN 7 GHz wideband transistor Product specification Supersedes data of 1995 Apr 11 File under Discrete Semiconductors, SC14 1995 Sep 26 Philips Semiconductors Product specification NPN 7 GHz wideband transistor FEATURES • High power gain • High output voltage • High maximum junction temperature • Gold metallization ensures excellent reliability. APPLICATIONS It is primarily intended for use in MATV and microwave amplifiers, such as aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc. PINNING PIN 1 2 3 4 collector emitter base emitter Fig.1 SOT172A2. DESCRIPTION Top view 2 MSA457 BFQ621 DESCRIPTION Silicon NPN transistor in a 4-lead dual-emitter SOT172A2 package with a ceramic cap.