Datasheet Summary
DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ621 NPN 7 GHz wideband transistor
Product specification Supersedes data of 1995 Apr 11 File under Discrete Semiconductors, SC14 1995 Sep 26
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
Features
- High power gain
- High output voltage
- High maximum junction temperature
- Gold metallization ensures excellent reliability. APPLICATIONS It is primarily intended for use in MATV and microwave amplifiers, such as aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc. PINNING PIN 1 2 3 4 collector emitter base emitter Fig.1 SOT172A2. DESCRIPTION
Top view 2
MSA457
DESCRIPTION Silicon NPN transistor in...