NXP Semiconductors BFQ621
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.| Part No. | BFQ621 |
|---|---|
| Datasheet | BFQ621 Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN 7 GHz wideband transistor |
| Buy | Stock & Price |
FEATURES
● High power gain● High output voltage
● High maximum junction temperature
● Gold metallization ensures excellent reliability.
APPLICATIONS
It is primarily intended for use in MATV and microwave amplifiers, such as aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc. PINNING PIN 1 2 3 4 collector emitter base emitter Fig.1 SOT172A2.DESCRIPTION
Top view 2 MSA457 BFQ621DESCRIPTION
Silicon NPN transistor in a 4-lead dual-emitter SOT172A2 package with a ceramic cap. All leads are isolated from the mounting base. Emitter ballasting resistors and application of gold sandwich metallization ensures an optimum temperature profile and excellent reliability properties. handbook, halfpage 4 1 3 QUICK REFERENCE DATA SYMBOL VCEO IC Ptot hFE fT GUM VO PARAMETER collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency maximum unilateral power gain output voltage up to Tmb = 25 °C IC = 120 mA; VCE = 18 V; Tamb = 25 °C...
