NXP Semiconductors BFR505T
NPN 9 GHz wideband transistor
| Part No. | BFR505T |
|---|---|
| Datasheet | BFR505T Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN 9 GHz wideband transistor |
| Buy | Stock & Price |
FEATURES
● Low current consumption● High power gain
● Low noise figure
● High transition frequency
● Gold metallization ensures excellent reliability
● SOT416 (SC-75) package.
APPLICATIONS
Low power amplifiers, oscillators and mixers particularly in RF portable communication equipment (cellular phones, cordless phones and pagers) up to 2 GHz. QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE fT GUM F PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure Ts ≤ 75 °C; note 1 IC = 5 mA; VCE = 6 V; Tj = 25 °C IC = 5 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C RBE = 0 CONDITIONS open emitter MIN. − − − − 60 − TYP. − − − − 120 9 17 1.2 PINNING PIN 1 2 3 base emitter collector Marking code: N0. BFR505TDESCRIPTION
NPN transistor in a plastic SOT416 (SC-75) package. fpage 3DESCRIPTION
1 Top view 2 MBK090 Fig.1 SOT416. MAX. 20 15 18 150 250 − − 1.7 UNIT V V mA mW GHz dB d...
