BFR505T Datasheet (PDF) Download
NXP Semiconductors
BFR505T

Key Features

  • Low current consumption
  • High power gain
  • Low noise figure
  • High transition frequency
  • Gold metallization ensures excellent reliability
  • SOT416 (SC-75) package. APPLICATIONS Low power amplifiers, oscillators and mixers particularly in RF portable communication equipment (cellular phones, cordless phones and pagers) up to 2 GHz. QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE fT GUM F PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure Ts ≤ 75 °C; note 1 IC = 5 mA; VCE = 6 V; Tj = 25 °C IC = 5 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C RBE = 0 CONDITIONS open emitter MIN. - - - - 60 - TYP. - - - - 120 9 17 1.2 PINNING PIN 1 2 3 base emitter collector Marking code: N0. BFR505T