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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
BFR520T NPN 9 GHz wideband transistor
Preliminary specification 1999 Oct 18
Philips Semiconductors
Preliminary specification
NPN 9 GHz wideband transistor
FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT416 (SC75) envelope. DESCRIPTION NPN transistor in a plastic SOT416 (SC75) envelope. It is intended for wideband applications such as satellite TV tuners, cellular phones, cordless phones, pagers etc., with signal frequencies up to 2 GHz.
handbook, halfpage
BFR520T
PINNING PIN 1 2 3 base emitter collector DESCRIPTION Code: N2
3
1
2
MAM337
Fig.1 SOT416.