Datasheet Summary
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
BFR520T NPN 9 GHz wideband transistor
Preliminary specification 1999 Oct 18
Philips Semiconductors
Preliminary specification
NPN 9 GHz wideband transistor
Features
- High power gain
- Low noise figure
- High transition frequency
- Gold metallization ensures excellent reliability
- SOT416 (SC75) envelope. DESCRIPTION NPN transistor in a plastic SOT416 (SC75) envelope. It is intended for wideband applications such as satellite TV tuners, cellular phones, cordless phones, pagers etc., with signal frequencies up to 2 GHz. handbook, halfpage
PINNING PIN 1 2 3 base emitter collector DESCRIPTION Code: N2
MAM337
Fig.1...
