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BFR92 - NPN 5 GHz wideband transistor

General Description

NPN transistor in a plastic SOT23 envelope primarily intended for use in RF wideband amplifiers and oscillators.

Key Features

  • low intermodulation distortion and high power gain; due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. PNP complement is BFT92.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BFR92 NPN 5 GHz wideband transistor Product speciļ¬cation File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product speciļ¬cation NPN 5 GHz wideband transistor DESCRIPTION NPN transistor in a plastic SOT23 envelope primarily intended for use in RF wideband amplifiers and oscillators. The transistor features low intermodulation distortion and high power gain; due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. PNP complement is BFT92. PINNING PIN 1 2 3 DESCRIPTION Code: P1p base emitter collector 1 Top view fpage BFR92 3 2 MSB003 Fig.1 SOT23.