NXP Semiconductors BFR93A
NPN 6 GHz wideband transistor
FEATURES
● High power gain● Low noise figure
● Very low intermodulation distortion.
DESCRIPTION
NPN wideband transistor in a plastic SOT23 package. PNP complement: BFT93. lfpage 3APPLICATIONS
● RF wideband amplifiers and oscillators. PINNING PINDESCRIPTION
1 base 2 emitter 3 collector 1 Top view 2 MSB003 Marking code: R2p. Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. VCBO VCEO IC Ptot Cre fT GUM F VO collector-base voltage open emitter collector-emitter voltage open base collector current (DC) total power dissipation Ts 95 C feedback capacitance IC = 0; VCE = 5 V; f = 1 MHz 0.6 transition frequency IC = 30 mA; VCE = 5 V; f = 500 MHz 6 maximum unilateral power gain IC = 30 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 C 13 noise figure output voltage IC = 30 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 C 7 IC = 5 mA; VCE = 8 V; f = 1 GHz; s = opt; Tamb = 25 C 1.9 dim = 60 dB; IC = 30 mA; VCE = 8 V; RL = 75 ; Tamb = 25 C; fp + fq fr = 793.25 MHz 425 MAX. UNIT 15 V 12 V 35 mA 300 mW pF GHz dB dB dB mV LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).