DESCRIPTION
NPN resistance-stabilized transistor in a SOT122E capstan envelope. It features extremely low cross modulation, intermodulation and second order intermodulation distortion. Due to its high transition frequency, it has a high power gain, in conjunction with good wideband properties, and low noise up to high frequencies. It is primarily intended for CATV and MATV applications. The BFR94A is a replacement for the BFR94. PINNING PIN 1 2 3 4 DESCRIPTION
collector emitter base emitter 1 C lfpage BFR94A 4 3 2 MBB904 Fig.1 SOT122E. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot fT F dim d2 PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation transition frequency noise figure intermodulation distortion second order intermodulation distortion up to Tc = 145 °C; f > 1 MHz Ic = 90 mA; VCE = 20 V; f = 500 MHz; Tj = 25 °C Ic = 90 mA; VCE = 20 V; f = 200 MHz; Tamb = 25 °C Ic = 90 mA; VCE = 20 V; Vo = 60 dBmV; f(p+q−r) = 194.25 MHz Ic = 90 mA; VCE = 20 V; Vo = 48 dBmV; fp + fq = 210 MHz WARNING Product and environmental safety - toxic materials This product contains beryllium oxide.
NXP Semiconductors
