NXP Semiconductors BFT45
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | BFT45 |
|---|---|
| Datasheet | BFT45 Download |
| Manufacturer |  NXP Semiconductors |
| Description | PNP high-voltage transistor |
| Buy | Stock & Price |
FEATURES
● Low current (max. 500 mA)● High voltage (max. 250 V).
APPLICATIONS
● High voltage switching and amplification● Industrial and telephone applications. 1 handbook, halfpage 2 BFT45 PINNING PIN 1 2 3 emitter base collector, connected to case
DESCRIPTION
3 2DESCRIPTION
PNP high-voltage transistor in a TO-39 metal package. 3 MAM334 1 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE Cc fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain collector capacitance transition frequency Tcase ≤ 50 °C IC = −10 mA; VCE = −10 V IE = ie = 0; VCE = −20 V; f = 1 MHz IC = −15 mA; VCE = −10 V; f = 100 MHz open emitter open base CONDITIONS − − − − 50 − − MIN. − − − − − − 70 TYP. MAX. −250 −250 −1 5 150 15 − pF MHz UNIT V V A W 1997 Apr 18 2 Philips Semiconductors Product specification PNP high-voltage transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
