BFT45
FEATURES
- Low current (max. 500 m A)
- High voltage (max. 250 V). APPLICATIONS
- High voltage switching and amplification
- Industrial and telephone applications.
1 handbook, halfpage 2
PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION
3 2
DESCRIPTION
PNP high-voltage transistor in a TO-39 metal package.
MAM334
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot h FE Cc f T PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain collector capacitance transition frequency Tcase ≤ 50 °C IC =
- 10 m A; VCE =
- 10 V IE = ie = 0; VCE =
- 20 V; f = 1 MHz IC =
- 15 m A; VCE =
- 10 V; f = 100 MHz open emitter open base CONDITIONS
- -
- - 50
- - MIN.
- -
- -
- - 70 TYP. MAX.
- 250
- 250
- 1 5 150 15
- p F MHz UNIT V V A W
1997 Apr 18
Philips Semiconductors
Product specification
PNP high-voltage transistor
LIMITING VALUES In accordance with the Absolute...
