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BFT93 Datasheet PDF

NXP Semiconductors BFT93

The transistor features low intermodulation distortion and high power gain; due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies.
Part No. BFT93
Datasheet BFT93 Download
Manufacturer
NXP Semiconductors
Description PNP 5GHz wideband transistor
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BFT93 datasheet page 1 preview

DESCRIPTION

PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF wideband amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc. NPN complements are BFR93 and BFR93A. PINNING PIN

DESCRIPTION

Code: X1p 1 base 2 emitter 3 collector lfpage 3 1 Top view 2 MSB003 Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS VCBO VCEO Ic Ptot fT Cre GUM F Vo collector-base voltage open emitter collector-emitter voltage open base DC collector current total power dissipation transition frequency feedback capacitance maximum unilateral power gain noise figure output voltage up to Ts = 95 C; note 1 IC = 30 mA; VCE = 5 V; f = 500 MHz; Tj = 25 C IC = 2 mA; VCE = 5 V; f = 1 MHz IC = 30 mA; VCE = 5 V; f = 500 MHz; Tamb = 25 C IC = 10 mA; VCE = 5 V; f = 500 MHz; Tamb = 25 C dim = 60 dB; IC = 30 mA; VCE = 5 V; RL = 75 ; f(pqr) = 493.25 MHz Note 1. Ts is the temperature at the soldering point of the collector tab. TYP.     5 MAX.
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