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BFU510 Datasheet NPN Sige Wideband Transistor

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFU510 NPN SiGe wideband transistor Product specification Supersedes data of 2001 Nov 08 2003 Jun 12 Philips Semiconductors Product specification NPN SiGe wideband.

General Description

handbook, halfpage 3 4 DESCRIPTION NPN SiGe wideband transistor for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.

QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Gmax NF PARAMETER collector-base voltage collector current (DC) total power dissipation DC current gain maximum power gain noise figure Ts ≤ 115 °C IC = 10 mA;

VCE = 2 V;

Key Features

  • Very high power gain.
  • Very low noise figure.
  • High transition frequency.
  • Emitter is thermal lead.
  • Low feedback capacitance.
  • 45 GHz SiGe process.

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