BFU510 Overview
handbook, halfpage 3 4 DESCRIPTION NPN SiGe wideband transistor for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Gmax NF PARAMETER collector-base voltage collector current (DC) total power dissipation DC current gain maximum power gain noise figure Ts ≤ 115 °C IC = 10 mA; ΓS = Γopt CAUTION This product is supplied in anti-static packing...
BFU510 Key Features
- Very high power gain
- Very low noise figure
- High transition frequency
- Emitter is thermal lead
- Low feedback capacitance
- 45 GHz SiGe process