BFU520Y Overview
Dual NPN silicon RF transistor for high speed, low noise applications in a plastic, 6-pin SOT363 package. The BFU520Y is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.
BFU520Y Key Features
- Low noise, high breakdown RF transistor
- AEC-Q101 qualified
- Minimum noise figure (NFmin) = 0.65 dB at 900 MHz
- Maximum stable gain 19 dB at 900 MHz
- 11 GHz fT silicon technology