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BFU520Y - Dual NPN wideband silicon RF transistor

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NXP

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BFU520Y Dual NPN wideband silicon RF transistor by NXP - Datasheet Preview — Datasheet preview – BFU520Y

Datasheet Details

Part number	BFU520Y
Manufacturer	NXP
File Size	299.15 KB
Description	Dual NPN wideband silicon RF transistor
Datasheet	BFU520Y Datasheet
Additional preview pages of the BFU520Y datasheet.

Product details

Description

Dual NPN silicon RF transistor for high speed, low noise applications in a plastic, 6-pin SOT363 package.

Features

Low noise, high breakdown RF transistor.
AEC-Q101 qualified.
Minimum noise figure (NFmin) = 0.65 dB at 900 MHz.
Maximum stable gain 19 dB at 900 MHz.
11 GHz fT silicon technology 1.3.

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Published: Dec 18, 2019 |