NXP Semiconductors BFU540
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.| Part No. | BFU540 |
|---|---|
| Datasheet | BFU540 Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN SiGe wideband transistor |
| Buy | Stock & Price |
FEATURES
● Very high power gain● Very low noise figure
● High transition frequency
● Emitter is thermal lead
● Low feedback capacitance
● 45 GHz SiGe process.
APPLICATIONS
● RF front end● Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.)
● Radar detectors
● Pagers
● Satellite television tuners (SATV)
● High frequency oscillators. Marking code: A4. 2 Top view 1 MSB842 BFU540 PINNING PIN 1 2 3 4 emitter base emitter collector
DESCRIPTION
handbook, halfpage 3 4DESCRIPTION
NPN SiGe wideband transistor for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Gmax NF PARAMETER collector-base voltage collector current (DC) total power dissipation DC current gain maximum power gain noise figure Ts ≤ 98 °C IC = 40 mA; VCE = 2 V; Tj = 25 °C IC = 2 mA; VCE = 2 V; f = 2 GHz; ΓS = Γopt CAUTION open emitter collector-emitter voltage open base CONDITIONS MIN. − − − − 70 − TYP. − − 40 − 140 20 0.9 MAX.
