NXP Semiconductors BFU630F
This device is sensitive to ElectroStatic Discharge (ESD).| Part No. | BFU630F |
|---|---|
| Datasheet | BFU630F Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN wideband silicon RF transistor |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Low noise high gain microwave transistor● Noise figure (NF) = 0.85 dB at 2.4 GHz
● High maximum stable gain 26 dB at 1.8 GHz
● 40 GHz fT silicon technology 1.3
APPLICATIONS
● Low noise amplifiers for microwave communications systems● WLAN and CDMA applications
● Analog/digital cordless applications
● Ku band oscillators DRO’s
● LNB
● RKE
● AMR
● GPS
● ZigBee
● LTE, cellular, UMTS
● FM radio
● Mobile TV
● Bluetooth NXP Semiconductors BFU630F NPN wideband silicon RF transistor 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VCBO VCEO VEBO IC Ptot hFE collector-base voltage collector-emitter voltage emitter-base voltage collector current total power dissipation DC current gain CCBS fT collector-base capacitance transition frequency Gp(max) maximum power gain NF noise figure PL(1dB) output power at 1 dB gain compression Conditions open emitter open base open collector Tsp 90 C IC = 5 mA; VCE = 2 V; Tj = 25 C VCB = 2 V; f = 1 MHz IC = 10...
