NXP Semiconductors BFU690F
This device is sensitive to ElectroStatic Discharge (ESD).| Part No. | BFU690F |
|---|---|
| Datasheet | BFU690F Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN wideband silicon RF transistor |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Low noise high linearity microwave transistor● High output third-order intercept point 34 dBm at 1.8 GHz
● 40 GHz fT silicon technology 1.3
APPLICATIONS
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● Ka band oscillators DRO’s C-band high output buffer amplifier ZigBee LTE, cellular, UMTS Datasheet pdf - NXP Semiconductors BFU690F NPN wideband silicon RF transistor 1.4 Quick reference data Table 1. VCBO VCEO VEBO IC Ptot hFE CCBS fT Gp(max) NF PL(1dB) Quick reference data Conditions open emitter open base open collector Tsp 90 C IC = 20 mA; VCE = 2 V; Tj = 25 C VCB = 2 V; f = 1 MHz IC = 60 mA; VCE = 1 V; f = 2 GHz; Tamb = 25 C IC = 60 mA; VCE = 1 V; f = 1.8 GHz; Tamb = 25 C IC = 15 mA; VCE = 2 V; f = 1.8 GHz; S = opt IC = 70 mA; VCE = 4 V; ZS = ZL = 50 ; f = 1.8 GHz; Tamb = 25 C [2] [1] Symbol Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current total power dissipation DC current gain collector-base capacitance transition frequency maximum power...
