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BFU910F Datasheet NPN Wideband Silicon Germanium Rf Transistor

Manufacturer: NXP Semiconductors

Overview: BFU910F NPN wideband silicon germanium RF transistor Rev. 2 — 16 January 2015 Product data sheet 1. Product profile 1.

General Description

NPN silicon germanium RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

The BFU910F is suitable for small signal applications up to 20 GHz.

1.2

Key Features

  • Low noise high gain microwave transistor.
  • Minimum noise figure (NFmin) = 0.65 dB at 12 GHz.
  • Maximum stable gain 14.2 dB at 12 GHz.
  • 90 GHz fT SiGe technology 1.3.

BFU910F Distributor