BFU910F Description
NPN silicon germanium RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. The BFU910F is suitable for small signal applications up to 20 GHz.
BFU910F Key Features
- Low noise high gain microwave transistor
- Minimum noise figure (NFmin) = 0.65 dB at 12 GHz
- Maximum stable gain 14.2 dB at 12 GHz
- 90 GHz fT SiGe technology