NXP Semiconductors BFX34
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.FEATURES
● High current (max. 2 A)● Low voltage (max. 60 V).
APPLICATIONS
● High-current switching, e.g. inverters and switching regulators. 1 handbook, halfpage BFX34 PINNING PIN 1 2 3 emitter base collector, connected to caseDESCRIPTION
DESCRIPTION
NPN switching transistor in a TO-39 metal package. 3 2 2 3 MAM317 1 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT toff PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency turn-off time Tcase ≤ 25 °C IC = 2 A; VCE = 2 V IC = 0.5 A; VCE = 5 V; f = 100 MHz ICon = 5 A; IBon = 0.5 A; IBoff = −0.5 A CONDITIONS open emitter open base − − − − 40 70 − MIN. MAX. 120 60 2 5 150 − 1.2 MHz µs V V A W UNIT 1997 Apr 22 2 Philips Semiconductors Product specification NPN switching transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg T...