BFX34 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFX34 NPN switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 22 Philips Semiconductors Product specification NPN switching transistor Features - High current (max. 2 A) - Low voltage (max. 60 V). APPLICATIONS - High-current switching, e.g. inverters and switching regulators. 1 handbook, halfpage PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION DESCRIPTION NPN switching transistor in a TO-39 metal package. 2 2 MAM317 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot h FE f T toff PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency turn-off time Tcase ≤ 25 °C IC = 2 A; VCE = 2 V IC = 0.5 A; VCE = 5 V; f = 100 MHz ICon = 5 A; IBon = 0.5 A; IBoff = - 0.5 A CONDITIONS open emitter open base - - - - 40 70 - MIN. MAX. 120 60 2 5 150 - 1.2 MHz µs V V A W UNIT 1997 Apr 22 Philips Semiconductors Product specification NPN switching transistor LIMITING VALUES In accordance with the...