BFY51 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFY50; BFY51; BFY52 NPN medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 22 Philips Semiconductors Product specification NPN medium power transistors Features - High current (max. 1 A) - Low voltage (max. 35 V). APPLICATIONS - General purpose industrial applications. DESCRIPTION NPN medium power transistor in a TO-39 metal package. 1 handbook, halfpage 2 BFY50; BFY51; BFY52 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION 3 2 MAM317 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BFY50 BFY51 BFY52 VCEO collector-emitter voltage BFY50 BFY51 BFY52 ICM Ptot h FE peak collector current total power dissipation DC current gain BFY50 BFY51 BFY52 f T transition frequency BFY50 BFY51; BFY52 IC = 50 m A; VCE = 10 V; f = 100 MHz 60 50 - - - - MHz MHz Tamb ≤ 25 °C Tcase ≤ 100 °C IC = 150 m A; VCE = 10 V 30 40 60 112 123 142 - - - open base - - - - - - - - - - - - 35 30 20 1 800 2.86 V V V A m W W open emitter - -...