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BGD702N - 750 MHz/ 18.5 dB gain power doubler amplifier

General Description

Hybrid amplifier module in a SOT115J package operating at a voltage supply of 24 V (DC).

Fig.1 Simplified outline.

Key Features

  • Excellent linearity.
  • Extremely low noise.
  • Silicon nitride passivation.
  • Rugged construction.
  • Gold metallization ensures excellent reliability.

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Full PDF Text Transcription for BGD702N (Reference)

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD702N 750 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 25 2001 No...

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amplifier Product specification Supersedes data of 2001 Oct 25 2001 Nov 02 Philips Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier FEATURES • Excellent linearity • Extremely low noise • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent reliability. APPLICATIONS • CATV systems operating in the 40 to 750 MHz frequency range. DESCRIPTION Hybrid amplifier module in a SOT115J package operating at a voltage supply of 24 V (DC). PINNING - SOT115J PIN 1 2 3 5 7 8 9 input common common +VB common common output BGD702N DESCRIPTION handbook, halfpage 1 2 3 8 5 7