• Part: BGF944
  • Description: GSM900 EDGE power module
  • Manufacturer: NXP Semiconductors
  • Size: 91.74 KB
BGF944 Datasheet (PDF) Download
NXP Semiconductors
BGF944

Key Features

  • Low distortion to a GSM EDGE signal
  • Excellent 2-tone performance
  • Low die temperature due to copper flange
  • 50 Ω input/output impedance
  • Flat gain over frequency band. APPLICATIONS
  • Base station RF power amplifiers in the 920 to 960 MHz frequency band
  • GSM, GSM EDGE, multi carrier applications
  • ACPR 400 kHz at 30 kHz resolution bandwidth. f (MHz) 920 to 960 920 to 960 VS (V) 26 26 PL (W) 17 2.5 Gp (dB) 28 29 η (%) 47 15 ACPR (dBc)
  • SOT365C PIN 1 2 3 Flange RF input VS RF output ground DESCRIPTION MBL257 rms EVM (%)
  • 13 27 - -0.8