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BGF944 Datasheet

Manufacturer: NXP Semiconductors
BGF944 datasheet preview

Datasheet Details

Part number BGF944
Datasheet BGF944_PhilipsSemiconductors.pdf
File Size 91.74 KB
Manufacturer NXP Semiconductors
Description GSM900 EDGE power module
BGF944 page 2 BGF944 page 3

BGF944 Overview

17 W LDMOS power amplifier module for base station amplifier applications in the 920 to 960 MHz band. QUICK REFERENCE DATA Typical RF performance at Tmb = 25 °C. MODE OF OPERATION CW GSM EDGE Note.

BGF944 Key Features

  • Typical GSM EDGE performance at a supply voltage of 26 V
  • Output power = 2.5 W
  • Gain = 29 dB
  • Efficiency = 15%
  • ACPR < -65 dBc at 400 kHz
  • rms EVM < 0.4%
  • peak EVM < 1.2%
  • Low distortion to a GSM EDGE signal
  • Excellent 2-tone performance
  • Low die temperature due to copper flange

BGF944 Applications

  • Base station RF power amplifiers in the 920 to 960 MHz frequency band
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