• Part: BGS8M2
  • Description: amplifier MMIC
  • Manufacturer: NXP Semiconductors
  • Size: 215.96 KB
BGS8M2 Datasheet (PDF) Download
NXP Semiconductors
BGS8M2

Description

The BGS8M2 is, also known as the LTE3001M, a Low-Noise Amplifier (LNA) with bypass switch for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package. The BGS8M2 requires one external matching inductor.

Key Features

  • Operating frequency from 1805 MHz to 2200 MHz
  • Noise figure = 0.85 dB
  • Gain 14.4 dB
  • High input 1 dB pression point of -3.5 dBm
  • Bypass switch insertion loss of 2.2 dB
  • High in band IP3i of 3.5 dBm
  • Supply voltage 1.5 V to 3.1 V
  • Self-shielding package concept
  • Integrated supply decoupling capacitor
  • Optimized performance at a supply current of 5.8 mA