Datasheet Details
| Part number | BGS8M2 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 215.96 KB |
| Description | amplifier MMIC |
| Datasheet |
 BGS8M2 Datasheet
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General Description
The BGS8M2 is, also known as the LTE3001M, a Low-Noise Amplifier (LNA) with bypass switch for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package.
The BGS8M2 requires one external matching inductor.
Key Features
- Operating frequency from 1805 MHz to 2200 MHz.
- Noise figure = 0.85 dB.
- Gain 14.4 dB.
- High input 1 dB compression point of -3.5 dBm.
- Bypass switch insertion loss of 2.2 dB.
- High in band IP3i of 3.5 dBm.
- Supply voltage 1.5 V to 3.1 V.
- Self-shielding package concept.
- Integrated supply decoupling capacitor.
- Optimized performance at a supply current of 5.8 mA.
- Power-down mode current consumption < 1 µA.