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BGU8L1 - amplifier MMIC

Description

The BGU8L1 is, also known as the LTE1001L, a Low-Noise Amplifier (LNA) for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package.

The BGU8L1 requires one external matching inductor.

Features

  • Operating frequency from 728 MHz to 960 MHz.
  • Noise figure = 0.7 dB.
  • Gain = 14 dB.
  • High input 1 dB compression point of 3 dBm.
  • High in band IP3i of 2 dBm.
  • Supply voltage 1.5 V to 3.1 V.
  • Self-shielding package concept.
  • Integrated supply decoupling capacitor.
  • Optimized performance at a supply current of 4.6 mA.
  • Power-down mode current consumption < 1 A.
  • Integrated temperature stabilized bias for easy design.
  • Require only one input match.

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Datasheet preview – BGU8L1

Datasheet Details

Part number BGU8L1
Manufacturer NXP
File Size 100.91 KB
Description amplifier MMIC
Datasheet download datasheet BGU8L1 Datasheet
Additional preview pages of the BGU8L1 datasheet.

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Full PDF Text Transcription

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;621 BGU8L1 SiGe:C low-noise amplifier MMIC for LTE Rev. 3 — 16 January 2017 Product data sheet 1. General description The BGU8L1 is, also known as the LTE1001L, a Low-Noise Amplifier (LNA) for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package. The BGU8L1 requires one external matching inductor. The BGU8L1 adapts itself to the changing environment resulting from co-habitation of different radio systems in modern cellular handsets. It has been designed for low power consumption and optimal performance. At low jamming power levels, it delivers 14 dB gain at a noise figure of 0.7 dB. During high-power levels, it temporarily increases its bias current to improve sensitivity. The BGU8L1 is optimized for 728 MHz to 960 MHz. 2.
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