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BGY120B - UHF amplifier

General Description

The BGY120A and BGY120B are two-stage UHF amplifier modules in a SOT482B package with plastic cover.

Each module consists of two NPN silicon planar transistor dies mounted together with a matching and bias circuit components on a metallized ceramic substrate.

Key Features

  • Single 3.5 V nominal supply voltage.
  • 1 W output power.
  • Easy control of output power by DC voltage.
  • Very high efficiency (typ. 60%).
  • Silicon bipolar technology.
  • Standby current less than 10 µA.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D373 BGY120A; BGY120B UHF amplifier modules Objective specification 1997 Nov 11 Philips Semiconductors Objective specification UHF amplifier modules FEATURES • Single 3.5 V nominal supply voltage • 1 W output power • Easy control of output power by DC voltage • Very high efficiency (typ. 60%) • Silicon bipolar technology • Standby current less than 10 µA. APPLICATIONS • Hand-held transmitting equipment operating in the 824 to 849 MHz and 872 to 905 MHz frequency ranges. DESCRIPTION The BGY120A and BGY120B are two-stage UHF amplifier modules in a SOT482B package with plastic cover.