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BLA0912-250R Datasheet PDF

NXP Semiconductors BLA0912-250R

The BLA0912-250R is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 36 V; f = 960 MHz to 1215 MHz at rated load power.
Part No. BLA0912-250R
Datasheet BLA0912-250R Download
Manufacturer
NXP Semiconductors
Description Avionics LDMOS power transistor
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BLA0912-250R datasheet page 1 preview

FEATURES AND BENEFITS

„ „ „ „ High power gain Easy power control Excellent ruggedness Source on mounting base eliminates DC isolators, reducing common mode inductance. 1.3

APPLICATIONS

„ Avionics transmitter applications in the 960 MHz to 1215 MHz frequency range such as Mode-S, TCAS and JTIDS, DME or TACAN. NXP Semiconductors BLA0912-250R Avionics LDMOS power transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning

DESCRIPTION

drain gate source [1] Simplified outline 1 3 2 Graphic symbol 1 2 3 sym039 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Package Name

DESCRIPTION

BLA0912-250R flanged LDMOST ceramic package; 2 mounting holes; 2 leads Version SOT502A Type number 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS Ptot Tstg Tj Parameter drain-source voltage gate-source voltage total power dissipation storage temperature junction temperature Th ≤ 25 °C; tp = 50 μs; δ = 2 % Conditions Min −65 Max 75 ±22 700 +150 200 Unit V V W °C °C 5.
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