BLC6G10-200 Datasheet | NXP Semiconductors

.. BLC6G10-200; BLC6G10LS-200 UHF power LDMOS transistor Rev. 01 - 19 April 2006 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 869 to 894 VDS (V) 28 PL(AV) (W) 40 Gp (d B) 20 ηD (%) 27 ACPR (d Bc) - 39[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 d B at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. CAUTION This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 m A: N Average output power = 40 W N Power gain = 20 d B N Efficiency = 27 % N ACPR = - 39 d Bc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (800 MHz to 1000 MHz) I Internally matched for ease of use 1.3 Applications I RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 800 MHz to 1000 MHz frequency range. .. Philips Semiconductors BLC6G10-200; BLC6G10LS-200 UHF power LDMOS transistor 2. Pinning information Table 2: Pin 1 2 3 Pinning Description drain gate...