BLC6G10LS-160 - UHF power LDMOS transistor

This page provides the datasheet information for the BLC6G10LS-160, a member of the BLC6G10-160 UHF power LDMOS transistor family.

Product Overview

NXP

Part number	BLC6G10LS-160
Manufacturer	NXP
File Size	79.96 KB
Description	UHF power LDMOS transistor
Datasheet	BLC6G10LS-160 Datasheet
Additional preview pages of the BLC6G10LS-160 datasheet.

160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.

Table 1: Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.

I Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a supply voltage of 32 V and an IDq of 1200 mA: N Average output power = 32 W N Power gain = 23 dB N Efﬁciency = 28 % N ACPR =.
40 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efﬁciency I Excellent thermal stability I Designed for broadband operation (800 MHz to 1000 MHz) I Internally matched for ease of use 1.3.

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Published: Jan 19, 2007 |