Datasheet4U Logo Datasheet4U.com

BLC6G10LS-200 Datasheet UHF power LDMOS transistor

Manufacturer: NXP Semiconductors

Download the BLC6G10LS-200 datasheet PDF. This datasheet also includes the BLC6G10-200 variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLC6G10-200_PhilipsSemiconductors.pdf) that lists specifications for multiple related part numbers.

General Description

200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.

Table 1: Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.

Mode of operation 2-carrier W-CDMA [1] f (MHz) 869 to 894 VDS (V) 28 PL(AV) (W) 40 Gp (dB) 20 ηD (%) 27 ACPR (dBc) −39[1] Test signal: 3GPP;

Overview

www.DataSheet4U.com BLC6G10-200; BLC6G10LS-200 UHF power LDMOS transistor Rev.

01 — 19 April 2006 Objective data sheet 1.

Product profile 1.

Key Features

  • I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 20 dB N Efficiency = 27 % N ACPR =.
  • 39 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (800 MHz to 1000 MHz) I Internally matched for ease of use 1.3.

More Datasheets from NXP Semiconductors

Part Number Description
BLC6G10LS-160 UHF power LDMOS transistor
BLC6G10-160 UHF power LDMOS transistor
BLC6G10-200 UHF power LDMOS transistor
BLC6G20-110 UHF power LDMOS transistor
BLC6G20-75 UHF power LDMOS transistor
BLC6G20LS-110 UHF power LDMOS transistor
BLC6G20LS-75 UHF power LDMOS transistor
BLC6G22-100 UHF power LDMOS transistor
BLC6G22-130 UHF power LDMOS transistor
BLC6G22LS-100 UHF power LDMOS transistor