Datasheet Details
| Part number | BLC6G20-110 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 88.42 KB |
| Description | UHF power LDMOS transistor |
| Datasheet |
 BLC6G20-110 Datasheet
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General Description
110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Key Features
- s Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 950 mA: x Output power = 25 W (AV) x Gain = 18 dB x Efficiency = 32 % x IMD3 =.
- 37 dBc x ACPR =.
- 40 dBc s Easy power control s Integrated ESD protection s Excellent ruggedness s High efficiency s Excellent thermal stability s Designed for broadband operation (1800 MHz to 2000 MHz) s Internally matched for ease of use www. DataSheet4U. com Philips Semiconductors BL.