BLC6G20LS-110 - UHF power LDMOS transistor

This page provides the datasheet information for the BLC6G20LS-110, a member of the BLC6G20-110 UHF power LDMOS transistor family.

Product Overview

NXP

Part number	BLC6G20LS-110
Manufacturer	NXP
File Size	88.42 KB
Description	UHF power LDMOS transistor
Datasheet	BLC6G20LS-110 Datasheet
Additional preview pages of the BLC6G20LS-110 datasheet.

110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

s Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 950 mA: x Output power = 25 W (AV) x Gain = 18 dB x Efﬁciency = 32 % x IMD3 =.
37 dBc x ACPR =.
40 dBc s Easy power control s Integrated ESD protection s Excellent ruggedness s High efﬁciency s Excellent thermal stability s Designed for broadband operation (1800 MHz to 2000 MHz) s Internally matched for ease of use www. DataSheet4U. com Philips Semiconductors BL.

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Published: Aug 17, 2007 |