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BLC6G20LS-110 Datasheet Uhf Power Ldmos Transistor

Manufacturer: NXP Semiconductors

Overview: .. BLC6G20-110; BLC6G20LS-110 UHF power LDMOS transistor Rev. 01 — 30 January 2006 Objective data sheet 1. Product profile 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Table 1: Typical performance RF performance at Tcase = 25 °C in a mon source class-AB production test circuit.

Mode of operation f (MHz) CW GSM EDGE 2-carrier W-CDMA VDS (V) PL (W) 100 48 (AV) 25 (AV) Gp (dB) 17 17.5 18 ηD (%) 51 40 32 ACPR400 (dBc) −60 ACPR600 (dBc) −70 EVM (%) 2.1 IMD3 (dBc) −37 [1] ACPR (dBc) −40 [1] 1930 to 1990 28 1930 to 1990 28 1930 to 1990 28 [1] Test signal: 3GPP;

Key Features

  • s Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 950 mA: x Output power = 25 W (AV) x Gain = 18 dB x Efficiency = 32 % x IMD3 =.
  • 37 dBc x ACPR =.
  • 40 dBc s Easy power control s Integrated ESD protection s Excellent ruggedness s High efficiency s Excellent thermal stability s Designed for broadband operation (1800 MHz to 2000 MHz) s Internally matched for ease of use www. DataSheet4U. com Philips Semiconductors BL.

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