BLC6G22-100 - UHF power LDMOS transistor

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NXP

BLC6G22-100 UHF power LDMOS transistor by NXP - Datasheet Preview — Datasheet preview – BLC6G22-100

Datasheet Details

Part number	BLC6G22-100
Manufacturer	NXP
File Size	77.38 KB
Description	UHF power LDMOS transistor
Datasheet	BLC6G22-100 Datasheet
Additional preview pages of the BLC6G22-100 datasheet.

Product details

Description

100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. 37 [1] ACPR (dBc) 40 [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MH

Features

s Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 950 mA: x Output power = 25 W (AV) x Gain = 18 dB x Efﬁciency = 32 % x IMD3 =.
37 dBc x ACPR =.
40 dBc s Easy power control s Integrated ESD protection s Excellent ruggedness s High efﬁciency s Excellent thermal stability s Designed for broadband operation (2000 MHz to 2200 MHz) s Internally matched for ease of use Philips Semiconductors BLC6G22-100; BLC6G22LS-.

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Published: Jan 19, 2007 |