BLC6G22-100 Datasheet | NXP Semiconductors

.. BLC6G22-100; BLC6G22LS-100 UHF power LDMOS transistor Rev. 01 - 30 January 2006 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1: Typical performance RF performance at Tcase = 25 °C in a mon source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 28 PL(AV) (W) 25 Gp (dB) 18 ηD (%) 32 IMD3 (dBc) - 37 [1] ACPR (dBc) - 40 [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz. CAUTION This device is sensitive to...