BLC6G22LS-100 - UHF power LDMOS transistor

This page provides the datasheet information for the BLC6G22LS-100, a member of the BLC6G22-100 UHF power LDMOS transistor family.

Product Overview

NXP

Part number	BLC6G22LS-100
Manufacturer	NXP
File Size	77.38 KB
Description	UHF power LDMOS transistor
Datasheet	BLC6G22LS-100 Datasheet
Additional preview pages of the BLC6G22LS-100 datasheet.

100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

s Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 950 mA: x Output power = 25 W (AV) x Gain = 18 dB x Efﬁciency = 32 % x IMD3 =.
37 dBc x ACPR =.
40 dBc s Easy power control s Integrated ESD protection s Excellent ruggedness s High efﬁciency s Excellent thermal stability s Designed for broadband operation (2000 MHz to 2200 MHz) s Internally matched for ease of use Philips Semiconductors BLC6G22-100; BLC6G22LS-.

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Published: Jan 19, 2007 |