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BLC6G22LS-100 - UHF power LDMOS transistor

Download the BLC6G22LS-100 datasheet PDF. This datasheet also covers the BLC6G22-100 variant, as both devices belong to the same uhf power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

Key Features

  • s Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 950 mA: x Output power = 25 W (AV) x Gain = 18 dB x Efficiency = 32 % x IMD3 =.
  • 37 dBc x ACPR =.
  • 40 dBc s Easy power control s Integrated ESD protection s Excellent ruggedness s High efficiency s Excellent thermal stability s Designed for broadband operation (2000 MHz to 2200 MHz) s Internally matched for ease of use Philips Semiconductors BLC6G22-100; BLC6G22LS-.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLC6G22-100_PhilipsSemiconductors.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by NXP Semiconductors

Part Number Description
BLC6G22LS-130 UHF power LDMOS transistor
BLC6G22-100 UHF power LDMOS transistor
BLC6G22-130 UHF power LDMOS transistor
BLC6G20-110 UHF power LDMOS transistor
BLC6G20-75 UHF power LDMOS transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com BLC6G22-100; BLC6G22LS-100 UHF power LDMOS transistor Rev. 01 — 30 January 2006 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 28 PL(AV) (W) 25 Gp (dB) 18 ηD (%) 32 IMD3 (dBc) −37 [1] ACPR (dBc) −40 [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.