Description
130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
37 [1]
40 [1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz
Features
- s Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 950 mA: x Output power = 30 W (AV) x Gain = 16 dB x Efficiency = 31 % x IMD3 =.
- 37 dBc x ACPR =.
- 40 dBc s Easy power control s Integrated ESD protection s Excellent ruggedness s High efficiency s Excellent thermal stability s Designed for broadband operation (2000 MHz to 2200 MHz) s Internally matched for ease of use
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Philips Semiconductors
BL.
BLC6G22LS-130 Datasheet
