BLC6G22LS-130 datasheet by NXP Semiconductors.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | BLC6G22LS-130 |
|---|---|
| Datasheet | BLC6G22LS-130 BLC6G22-130 Datasheet (PDF) |
| File Size | 87.91 KB |
| Manufacturer | NXP Semiconductors |
| Description | UHF power LDMOS transistor |
|
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130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Typical performance RF performance at Tcase = 25 °C in a mon source class-AB production test circuit. PAR = 7 dB at 0.01 % probability on CCDF per carrier;.
View all NXP Semiconductors datasheets
| Part Number | Description |
|---|---|
| BLC6G22LS-100 | UHF power LDMOS transistor |
| BLC6G22-100 | UHF power LDMOS transistor |
| BLC6G22-130 | UHF power LDMOS transistor |
| BLC6G20-110 | UHF power LDMOS transistor |
| BLC6G20-75 | UHF power LDMOS transistor |
| BLC6G20LS-110 | UHF power LDMOS transistor |
| BLC6G20LS-75 | UHF power LDMOS transistor |
| BLC6G10-160 | UHF power LDMOS transistor |
| BLC6G10-200 | UHF power LDMOS transistor |
| BLC6G10LS-160 | UHF power LDMOS transistor |
