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BLF0810-180 - Base station LDMOS transistors

General Description

BLF0810-180; BLF0810S-180 APPLICATIONS Common source class-AB operation applications in the 860 to 960 MHz frequency range

CDMA and multicarrier applications.

DESCRIPTION 180 W LDMOS power transistor for base station applications at frequencies from 800 to 1000 MHz.

Key Features

  • Typical CDMA IS95 performance at standard settings with a supply voltage of 27 V and IDQ of 1130 mA. Adjacent channel bandwidth is 30 kHz, adjacent channel at ± 750 kHz:.
  • Output power = 30 W.
  • Gain = 16 dB.
  • Efficiency = 27%.
  • ACPR =.
  • 46 dBc at 750 kHz and BW = 30 kHz.
  • Easy power control.
  • Excellent ruggedness.
  • High power gain.
  • Excellent thermal stability.
  • Designed for broadband operation (800 to 1000.

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www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF0810-180; BLF0810S-180 Base station LDMOS transistors Product specification Supersedes data of 2003 May 09 2003 Jun 12 www.DataSheet4U.com Philips Semiconductors Product specification Base station LDMOS transistors FEATURES • Typical CDMA IS95 performance at standard settings with a supply voltage of 27 V and IDQ of 1130 mA. Adjacent channel bandwidth is 30 kHz, adjacent channel at ± 750 kHz: – Output power = 30 W – Gain = 16 dB – Efficiency = 27% – ACPR = −46 dBc at 750 kHz and BW = 30 kHz • Easy power control • Excellent ruggedness • High power gain • Excellent thermal stability • Designed for broadband operation (800 to 1000 MHz) • Internally matched for ease of use.