BLF0810-180 - Base station LDMOS transistors

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NXP

Part number	BLF0810-180
Manufacturer	NXP
File Size	161.39 KB
Description	Base station LDMOS transistors
Datasheet	BLF0810-180 Datasheet
Additional preview pages of the BLF0810-180 datasheet.

BLF0810-180; BLF0810S-180 APPLICATIONS Common source class-AB operation applications in the 860 to 960 MHz frequency range

CDMA and multicarrier applications.

DESCRIPTION 180 W LDMOS power transistor for base station applications at frequencies from 800 to 1000 MHz.

Typical CDMA IS95 performance at standard settings with a supply voltage of 27 V and IDQ of 1130 mA. Adjacent channel bandwidth is 30 kHz, adjacent channel at ± 750 kHz:.
Output power = 30 W.
Gain = 16 dB.
Efficiency = 27%.
ACPR =.
46 dBc at 750 kHz and BW = 30 kHz.
Easy power control.
Excellent ruggedness.
High power gain.
Excellent thermal stability.
Designed for broadband operation (800 to 1000.

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Published: Aug 17, 2007 |