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BLF0810-90 - Base station LDMOS transistors

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NXP

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BLF0810-90 Base station LDMOS transistors by NXP - Datasheet Preview — Datasheet preview – BLF0810-90

Datasheet Details

Part number	BLF0810-90
Manufacturer	NXP
File Size	151.27 KB
Description	Base station LDMOS transistors
Datasheet	BLF0810-90 Datasheet
Additional preview pages of the BLF0810-90 datasheet.

Product details

Description

BLF0810-90; BLF0810S-90 APPLICATIONS RF power amplifier for GSM, EDGE and CDMA base stations and multicarrier operations in the 800 to 1000 MHz frequency range.

Features

Typical CDMA IS95 performance at standard settings with a supply voltage of 27 V and IDQ of 560 mA. Adjacent channel bandwidth is 30 kHz, adjacent channel at ± 750 kHz:.
Output power = 15 W (AV).
Gain = 16 dB.
Efficiency = 27%.
ACPR =.
46 dBc at 750 kHz and BW = 30 kHz.
70 W CW performance.
Easy power control.
Excellent ruggedness.
High power gain.
Excellent thermal stability.
Designed for.

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Published: Aug 17, 2007 |