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BLF0810-90 - Base station LDMOS transistors

Datasheet Summary

Description

BLF0810-90; BLF0810S-90 APPLICATIONS

RF power amplifier for GSM, EDGE and CDMA base stations and multicarrier operations in the 800 to 1000 MHz frequency range.

DESCRIPTION 90 W LDMOS power transistor for base station applications at frequencies from 800 to 1000 MHz.

Features

  • Typical CDMA IS95 performance at standard settings with a supply voltage of 27 V and IDQ of 560 mA. Adjacent channel bandwidth is 30 kHz, adjacent channel at ± 750 kHz:.
  • Output power = 15 W (AV).
  • Gain = 16 dB.
  • Efficiency = 27%.
  • ACPR =.
  • 46 dBc at 750 kHz and BW = 30 kHz.
  • 70 W CW performance.
  • Easy power control.
  • Excellent ruggedness.
  • High power gain.
  • Excellent thermal stability.
  • Designed for.

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Datasheet Details

Part number BLF0810-90
Manufacturer NXP
File Size 151.27 KB
Description Base station LDMOS transistors
Datasheet download datasheet BLF0810-90 Datasheet
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www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF0810-90; BLF0810S-90 Base station LDMOS transistors Product specification Supersedes data of 2003 May 09 2003 Jun 12 www.DataSheet4U.com Philips Semiconductors Product specification Base station LDMOS transistors FEATURES • Typical CDMA IS95 performance at standard settings with a supply voltage of 27 V and IDQ of 560 mA. Adjacent channel bandwidth is 30 kHz, adjacent channel at ± 750 kHz: – Output power = 15 W (AV) – Gain = 16 dB – Efficiency = 27% – ACPR = −46 dBc at 750 kHz and BW = 30 kHz • 70 W CW performance • Easy power control • Excellent ruggedness • High power gain • Excellent thermal stability • Designed for broadband operation (800 to 1000 MHz) • Internally matched for ease of use.
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