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BLF0810S-180 - Base station LDMOS transistors

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NXP

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BLF0810S-180 Base station LDMOS transistors by NXP - Datasheet Preview — Datasheet preview – BLF0810S-180

Datasheet Details

Part number	BLF0810S-180
Manufacturer	NXP
File Size	161.39 KB
Description	Base station LDMOS transistors
Datasheet	BLF0810S-180 Datasheet
Note	This datasheet PDF includes multiple part numbers: BLF0810S-180, BLF0810-180. Please refer to the document for exact specifications by model.
Additional preview pages of the BLF0810S-180 datasheet.

Product details

Description

BLF0810-180; BLF0810S-180 APPLICATIONS Common source class-AB operation applications in the 860 to 960 MHz frequency range CDMA and multicarrier applications.

Features

Typical CDMA IS95 performance at standard settings with a supply voltage of 27 V and IDQ of 1130 mA. Adjacent channel bandwidth is 30 kHz, adjacent channel at ± 750 kHz:.
Output power = 30 W.
Gain = 16 dB.
Efficiency = 27%.
ACPR =.
46 dBc at 750 kHz and BW = 30 kHz.
Easy power control.
Excellent ruggedness.
High power gain.
Excellent thermal stability.
Designed for broadband operation (800 to 1000.

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Published: Aug 17, 2007 |