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BLF0810S-180 Datasheet Base Station Ldmos Transistors

Manufacturer: NXP Semiconductors

This datasheet includes multiple variants, all published together in a single manufacturer document.

BLF0810S-180 Overview

BLF0810S-180 APPLICATIONS mon source class-AB operation applications in the 860 to 960 MHz frequency range CDMA and multicarrier applications. DESCRIPTION 180 W LDMOS power transistor for base station applications at frequencies from 800 to 1000 MHz. PINNING - SOT502B PIN 1 2 3 drain gate source;.

BLF0810S-180 Key Features

  • Typical CDMA IS95 performance at standard settings with a supply voltage of 27 V and IDQ of 1130 mA. Adjacent channel ba
  • Output power = 30 W
  • Gain = 16 dB
  • Efficiency = 27%
  • ACPR = -46 dBc at 750 kHz and BW = 30 kHz
  • Easy power control
  • Excellent ruggedness
  • High power gain
  • Excellent thermal stability
  • Designed for broadband operation (800 to 1000 MHz)

BLF0810S-180 Applications

  • mon source class-AB operation applications in the 860 to 960 MHz frequency range
  • CDMA and multicarrier applications. DESCRIPTION 180 W LDMOS power transistor for base station applications at frequencies from 800 to 1000 MHz
  • SOT502B PIN 1 2 3 drain gate source; connected to flange DESCRIPTION

BLF0810S-180 Distributor