BLF0810S-180 Datasheet | NXP Semiconductors

.. DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF0810-180; BLF0810S-180 Base station LDMOS transistors Product specification Supersedes data of 2003 May 09 2003 Jun 12 .. Philips Semiconductors Product specification Base station LDMOS transistors Features - Typical CDMA IS95 performance at standard settings with a supply voltage of 27 V and IDQ of 1130 m A. Adjacent channel bandwidth is 30 k Hz, adjacent channel at ± 750 k Hz: - Output power = 30 W - Gain = 16 d B - Efficiency = 27% - ACPR = - 46 d Bc at 750 k Hz and BW = 30 k Hz - Easy power control - Excellent ruggedness - High power gain - Excellent thermal stability - Designed for broadband operation (800 to 1000 MHz) - Internally matched for ease of use. PINNING - SOT502A PIN 1 2 3 drain gate source; connected to flange DESCRIPTION BLF0810-180; BLF0810S-180 APPLICATIONS - mon source class-AB operation applications in the 860 to 960 MHz frequency range - CDMA and multicarrier applications. DESCRIPTION 180 W LDMOS power transistor for base station applications at frequencies from 800 to 1000 MHz. PINNING - SOT502B PIN 1 2 3 drain gate source; connected to flange DESCRIPTION handbook,...