BLF0810S-90 Datasheet | NXP Semiconductors

.. DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF0810-90; BLF0810S-90 Base station LDMOS transistors Product specification Supersedes data of 2003 May 09 2003 Jun 12 .. Philips Semiconductors Product specification Base station LDMOS transistors Features - Typical CDMA IS95 performance at standard settings with a supply voltage of 27 V and IDQ of 560 m A. Adjacent channel bandwidth is 30 k Hz, adjacent channel at ± 750 k Hz: - Output power = 15 W (AV) - Gain = 16 d B - Efficiency = 27% - ACPR = - 46 d Bc at 750 k Hz and BW = 30 k Hz - 70 W CW performance - Easy power control - Excellent ruggedness - High power gain - Excellent thermal stability - Designed for broadband operation (800 to 1000 MHz) - Internally matched for ease of use. PINNING - SOT502A PIN 1 2 3 drain gate source; connected to flange DESCRIPTION BLF0810-90; BLF0810S-90 APPLICATIONS - RF power amplifier for GSM, EDGE and CDMA base stations and multicarrier operations in the 800 to 1000 MHz frequency range. DESCRIPTION 90 W LDMOS power transistor for base station applications at frequencies from 800 to 1000 MHz. PINNING - SOT502B PIN 1 2 3 drain gate source; connected to flange DESCRIPTION handbook,...