BLF0810S-90 - Base station LDMOS transistors

Product Overview

NXP

Part number	BLF0810S-90
Manufacturer	NXP
File Size	151.27 KB
Description	Base station LDMOS transistors
Datasheet	BLF0810S-90 Datasheet
Note	This datasheet PDF includes multiple part numbers: BLF0810S-90, BLF0810-90. Please refer to the document for exact specifications by model.
Additional preview pages of the BLF0810S-90 datasheet.

BLF0810-90; BLF0810S-90 APPLICATIONS

RF power amplifier for GSM, EDGE and CDMA base stations and multicarrier operations in the 800 to 1000 MHz frequency range.

DESCRIPTION 90 W LDMOS power transistor for base station applications at frequencies from 800 to 1000 MHz.

Typical CDMA IS95 performance at standard settings with a supply voltage of 27 V and IDQ of 560 mA. Adjacent channel bandwidth is 30 kHz, adjacent channel at ± 750 kHz:.
Output power = 15 W (AV).
Gain = 16 dB.
Efficiency = 27%.
ACPR =.
46 dBc at 750 kHz and BW = 30 kHz.
70 W CW performance.
Easy power control.
Excellent ruggedness.
High power gain.
Excellent thermal stability.
Designed for.

📁 Similar Datasheet

Other Datasheets by NXP

Published: Aug 17, 2007 |