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BLF0810S-90 - Base station LDMOS transistors

Download the BLF0810S-90 datasheet PDF. This datasheet also covers the BLF0810-90 variant, as both devices belong to the same base station ldmos transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

BLF0810-90; BLF0810S-90 APPLICATIONS

RF power amplifier for GSM, EDGE and CDMA base stations and multicarrier operations in the 800 to 1000 MHz frequency range.

DESCRIPTION 90 W LDMOS power transistor for base station applications at frequencies from 800 to 1000 MHz.

Key Features

  • Typical CDMA IS95 performance at standard settings with a supply voltage of 27 V and IDQ of 560 mA. Adjacent channel bandwidth is 30 kHz, adjacent channel at ± 750 kHz:.
  • Output power = 15 W (AV).
  • Gain = 16 dB.
  • Efficiency = 27%.
  • ACPR =.
  • 46 dBc at 750 kHz and BW = 30 kHz.
  • 70 W CW performance.
  • Easy power control.
  • Excellent ruggedness.
  • High power gain.
  • Excellent thermal stability.
  • Designed for.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLF0810-90_PhilipsSemiconductors.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF0810-90; BLF0810S-90 Base station LDMOS transistors Product specification Supersedes data of 2003 May 09 2003 Jun 12 www.DataSheet4U.com Philips Semiconductors Product specification Base station LDMOS transistors FEATURES • Typical CDMA IS95 performance at standard settings with a supply voltage of 27 V and IDQ of 560 mA. Adjacent channel bandwidth is 30 kHz, adjacent channel at ± 750 kHz: – Output power = 15 W (AV) – Gain = 16 dB – Efficiency = 27% – ACPR = −46 dBc at 750 kHz and BW = 30 kHz • 70 W CW performance • Easy power control • Excellent ruggedness • High power gain • Excellent thermal stability • Designed for broadband operation (800 to 1000 MHz) • Internally matched for ease of use.