BLF10M6135
BLF10M6135 is Power LDMOS transistor manufactured by NXP Semiconductors.
BLF10M6135; BLF10M6LS135
Power LDMOS transistor
Rev. 1
- 24 June 2014
Product data sheet
1. Product profile
1.1 General description
135 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to 1000 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit.
Test signal f
PL(AV)
Gp
D
(MHz)
(V) (W)
(dB) (%)
2-carrier W-CDMA
869 to 894
28 26.5
21.0 28.0
ACPR (dBc)
- 39[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz.
1.2 Features and benefits
- Easy power control
- Integrated ESD protection
- Enhanced ruggedness
-...
