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BLF10M6LS200 - Power LDMOS transistor

This page provides the datasheet information for the BLF10M6LS200, a member of the BLF10M6200 Power LDMOS transistor family.

Datasheet Summary

Description

200 W LDMOS power transistor for ISM applications at frequencies from 700 MHz to 1000 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Features

  • Easy power control.
  • Integrated ESD protection.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (700 MHz to 1000 MHz).
  • Internally matched for ease of use.
  • Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) 1.3.

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Datasheet Details

Part number BLF10M6LS200
Manufacturer NXP
File Size 135.98 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF10M6LS200 Datasheet
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Full PDF Text Transcription

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BLF10M6200; BLF10M6LS200 Power LDMOS transistor Rev. 1 — 1 July 2013 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for ISM applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 869 to 894 28 40 20 28.5 39[1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. 1.
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