Download BLF1820-70 Datasheet PDF
NXP Semiconductors
BLF1820-70
FEATURES - Typical 2-tone performance at a supply voltage of 26 V and IDQ of 500 m A: - Output power = 65 W (PEP) - Gain = 12 d B - Efficiency = 32% - dim = - 26 d Bc - Easy power control - Excellent ruggedness - High power gain - Excellent thermal stability - Designed for broadband operation (1800 to 2000 MHz) - Internally matched for ease of use. Top view 2 handbook, halfpage PINNING PIN 1 2 3 drain gate source, connected to flange DESCRIPTION MBK394 APPLICATIONS - RF power amplifiers for GSM, EDGE and CDMA base stations and multicarrier applications in the 1800 to 2000 MHz frequency range. DESCRIPTION 70 W LDMOS power transistor for base station applications at frequencies from 1800 to 2000 MHz. QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon source test circuit. MODE OF OPERATION 2-tone, class-AB f (MHz) f1 = 2000; f2 = 2000.1 VDS (V) 26 CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during...