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BLF1820-70 - UHF power LDMOS transistor

General Description

1 3 MBK394 APPLICATIONS

RF power amplifiers for GSM, EDGE and CDMA base stations and multicarrier applications in the 1800 to 2000 MHz frequency range.

DESCRIPTION 70 W LDMOS power transistor for base station applications at frequencies from 1800 to 2000 MHz.

Key Features

  • Typical 2-tone performance at a supply voltage of 26 V and IDQ of 500 mA:.
  • Output power = 65 W (PEP).
  • Gain = 12 dB.
  • Efficiency = 32%.
  • dim =.
  • 26 dBc.
  • Easy power control.
  • Excellent ruggedness.
  • High power gain.
  • Excellent thermal stability.
  • Designed for broadband operation (1800 to 2000 MHz).
  • Internally matched for ease of use. Top view 2 handbook, halfpage BLF1820-70.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF1820-70 UHF power LDMOS transistor Product specification Supersedes data of 2001 Feb 12 2003 Feb 10 Philips Semiconductors Product specification UHF power LDMOS transistor FEATURES • Typical 2-tone performance at a supply voltage of 26 V and IDQ of 500 mA: – Output power = 65 W (PEP) – Gain = 12 dB – Efficiency = 32% – dim = −26 dBc • Easy power control • Excellent ruggedness • High power gain • Excellent thermal stability • Designed for broadband operation (1800 to 2000 MHz) • Internally matched for ease of use.