NXP Semiconductors BLF184XRG
The BLF184XRG is capable of withstanding a load mismatch corresponding to VSWR > 65 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 100 mA; PL = 700 W pulsed; f = 108 MHz.| Part No. | BLF184XRG |
|---|---|
| Datasheet | BLF184XRG Download |
| Manufacturer |  NXP Semiconductors |
| Description | Power LDMOS transistor |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Easy power control● Integrated ESD protection
● Excellent ruggedness
● High efficiency
● Excellent thermal stability
● Designed for broadband operation (HF to 600 MHz)
● Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3
APPLICATIONS
● Industrial, scientific and medical applications● Broadcast transmitter applications NXP Semiconductors BLF184XRG Power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 Pinning
DESCRIPTION
drain1 drain2 gate1 gate2 source [1] Connected to flange. 3. Ordering information Simplified outline Graphic symbol [1] V\P Table 3. Ordering information Type number Package NameDESCRIPTION
BLF184XRG - earless flanged LDMOST ceramic package; 4 leads Version SOT1214C 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS drain-source voltage VGS gate-source voltage Tstg storage temperature Tj junction te...
