BLF225
FEATURES
- Easy power control
- Good thermal stability
- Withstands full load mismatch. DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS transistor designed for munications transmitter applications in the VHF frequency range. The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. PINNING
- SOT123 PIN 1 2 3 4 drain source gate source DESCRIPTION g
MBB072
PIN CONFIGURATION k, halfpage
4 d s
MSB057
Fig.1 Simplified outline and symbol.
CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety
- toxic materials This product contains beryllium oxide. The product is entirely safe provided that the Be O disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After...
