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BLF2324M8LS200P - Power LDMOS transistor

Description

200 W LDMOS power transistor for industrial applications at frequencies from 2300 MHz to 2400 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Features

  • Excellent ruggedness.
  • High efficiency.
  • Low thermal resistance providing excellent thermal stability.
  • Designed for broadband operation (2300 MHz to 2400 MHz).
  • Lower output capacitance for improved performance in Doherty.

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Datasheet Details

Part number BLF2324M8LS200P
Manufacturer NXP
File Size 124.46 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF2324M8LS200P Datasheet
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BLF2324M8LS200P Power LDMOS transistor Rev. 1 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for industrial applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 1-carrier W-CDMA 2300 to 2400 1740 28 60 17.2 32 37 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. 1.
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