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BLF242 - HF/VHF power MOS transistor

General Description

Silicon N-channel enhancement mode vertical D-MOS transistor designed for professional transmitter applications in the HF/VHF frequency range.

The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap.

All leads are isolated from the flange.

Key Features

  • High power gain.
  • Low noise.
  • Easy power control.
  • Good thermal stability.
  • Withstands full load mismatch.
  • Gold metallization ensures excellent reliability. 2 3 MSB057 BLF242 PIN.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BLF242 HF/VHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification HF/VHF power MOS transistor FEATURES • High power gain • Low noise • Easy power control • Good thermal stability • Withstands full load mismatch • Gold metallization ensures excellent reliability. 2 3 MSB057 BLF242 PIN CONFIGURATION halfpage 1 4 d g MBB072 s DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for professional transmitter applications in the HF/VHF frequency range. The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. PINNING - SOT123 PIN 1 2 3 4 drain source gate source DESCRIPTION Fig.