BLF242 Datasheet | NXP Semiconductors

FEATURES - High power gain - Low noise - Easy power control - Good thermal stability - Withstands full load mismatch - Gold metallization ensures excellent reliability. 2 3 MSB057 PIN CONFIGURATION halfpage 4 d g MBB072 s DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for professional transmitter applications in the HF/VHF frequency range. The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. PINNING - SOT123 PIN 1 2 3 4 drain source gate source DESCRIPTION Fig.1 Simplified outline and symbol. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the Be O disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon source test circuit. MODE OF OPERATION CW, class-B f (MHz) 175 VDS (V) 28 PL (W) 5 Gp (d B) > 13 typ. 16 ηD (%) > 50 typ. 60 September 1992 Philips Semiconductors Product specification HF/VHF power MOS transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VDS ±VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current total power dissipation storage temperature junction temperature up to Tmb = 25 °C CONDITIONS - - - - - 65 - MIN. MAX. 65 20 1 16 150 200 UNIT V V A W °C °C THERMAL RESISTANCE SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from...